EOT高速光電探測(cè)器，光電探測(cè)器
總部在美國(guó)的EOT(Electro-Optics Technology)公司成立于1987年，專注于生產(chǎn)和開發(fā)高平均功率及高峰值功率法拉第旋轉(zhuǎn)器，隔離器以及高速光電探頭，為的光纖激光器廠商批量提供產(chǎn)品，并具有為特殊要求定制產(chǎn)品的開發(fā)生產(chǎn)能力。法拉第光旋轉(zhuǎn)器／光隔離器廣泛應(yīng)用于各種對(duì)于返回光極敏感的光學(xué)系統(tǒng)中，如多級(jí)激光放大器，光參量振蕩器，環(huán)形激光器，摻餌光纖放大器(用于隔離980nm泵浦光的反饋)，種子注入型激光器，非線性光學(xué)，光傳輸系統(tǒng)等。 產(chǎn)品包括：法拉第旋轉(zhuǎn)器和隔離器，高速光電探測(cè)器。
偏壓硅探測(cè)器
| Model No. | ET-2000 | ET-2020 | ET-2030 | ET-2040 |
| Detector Type | PIN | PIN | PIN | PIN |
| Rise Time/Fall Time | <350ps/<350ps | <1.5ns/<1.5ns | <300ps/<300ps | <30ns/<30ns |
| Responsivity at 830nm | 0.12mA/W | 0.6A/W | 0.47A/W | 0.6A/W |
| Bandwidth | >1.0GHz | >200MHz | >1.2GHz | >25MHz |
| Active Area Diameter | 110um x 55um | 2.55mm | 0.4mm | 4.57mm |
偏壓InGaAs探測(cè)器
| Model No. | ET-3000 | ET-3010 | ET-3020 | ET-3040 |
| Detector Type | PIN | PIN | PIN | PIN |
| Rise Time/Fall Time | <175ps/<175ps | <175ps/<175ps | <6ns/<250ns | <1.25ns/<3.70ns |
| Responsivity at 1300nm (A/W) | 0.9 | 0.85 | 0.9 | 0.9 |
| Bandwidth | >2GHz | >2GHz | >2.5MHz | >50MHz |
| Active Area Diameter | 100μm | 100μm | 3.0mm | 1.0mm |
<2GHz 放大光電探測(cè)器
| Model No. | ET-2030A | ET-3000A |
| Detector Material | Silicon | InGaAs |
| Rise Time/Fall Time (ps) | <500/<500 | <400/<400 |
| Conversion Gain (V/W) | 450 at 830nm | 900 at 1300nm |
| Bandwidth | 30kHz-1.2GHz | 30kHz-1.5GHz |
| Active Area Diameter (μm) | 400μm | 100μm |
TTL和模擬探測(cè)器
| Model No. | ET-2030TTL | ET-3000TTL |
| Detector Type | PIN | PIN |
| Active Area Diameter (μm) | 400 | 100 |
| Analog Output | ||
| Rise Time/Fall Time (ps) | <300/<300 | <175/<175 |
| Responsivity (A/W) | 0.47 at 830nm | 0.9 at 1300nm |
| Bandwidth | DC-1.2GHz | DC-1.2GHz |
| TTL Output | ||
| Rise Time/Fall Time (ns) | <8/<9 | <8/<9 |
| Bandwidth | DC-60MHz | DC-60MHz |
>12.5GHz GaAs 和 InGaAs探測(cè)器
| Model No. | ET-3500 | ET-3500F | ET-4000 | ET-4000F |
| Detector Type | PIN | PIN | PIN | PIN |
| Rise Time/Fall Time (ps) | <25/<25 | <25/<25 | <30/<30 | <30/<30 |
| Responsivity (A/W) | >0.90 at 1300nm | >0.65 at 1300nm | 0.53 at 830nm | 0.38 at 830nm |
| Bandwidth | >15GHz | >15GHz | >12.5GHz | >12.5GHz |
| Active Area Diameter (μm) | 32 | 32 | 60 | 60 |
>9GHz放大光電探測(cè)器
| Model No. | ET-3500A | ET-3500AF | ET-4000A | ET-4000AF |
| Detector Material | InGaAs | InGaAs | GaAs | GaAs |
| Rise Time/Fall Time (ps) | <40/<40 | <40/<40 | <40/<40 | <40/<40 |
| Conversion Gain (V/W) | >900 at 1300nm | >650 at 1300nm | 530 at 830nm | 380 at 830nm |
| Bandwidth | 20kHz – 9GHz | 20kHz – 9GHz | 20kHz – 9GHz | 20kHz – 9GHz |
| Active Area Diameter(μm) | 32 | 32 | 60 | 60 |
>12.5GHz 2um高速探測(cè)器
| Model No. | ET-5000 | ET-5000F |
| Detector Type | PIN | PIN |
Rise Time/Fall Time (ps) | 28 | 28 |
| Responsivity (A/W at 2000nm) | 1.3 | 0.95 |
| Bandwidth | >12.5GHz | >12.5GHz |
| Active Area Diameter (μm) | 40 | 40 |
2um放大高速探測(cè)器
| Model No. | ET-5000A | ET-5000AF |
| Detector Type | PIN | PIN |
| Rise Time/Fall Time (ps) | 40 | 40 |
| Conversion Gain (V/W at 2000nm) | 1300 | 950 |
| Bandwidth | 20kHz-9GHz | 20kHz-9GHz |
| Active Area Diameter (μm) | 40 | 40 |
1.5-5um PbSe 大面積探測(cè)器
Model No. | ET-6000 | |
| Detector Type | Photoconductor | |
| Gain | 100x | |
| Rise Time/Fall Time (μs) | 23 | |
| Responsivity (High Impedance) | >3.2x105V/W at 3.5μm | |
| Responsivity (50Ω Impedance) | >1.6x105V/W at 3.5μm | |
| Bandwidth | 0.02kHz-15kHz | |
| Active Area Diameter (mm x mm) | 5 x 5 | |
