該系列GaN IMFET氮化鎵微波功率晶體管代表了國(guó)產(chǎn)GaN功放管的較高技術(shù)水平,技術(shù)參數(shù)和表現(xiàn)達(dá)到了國(guó)外同類氮化鎵微波功率晶體管的水平,但是氮化鎵微波功率晶體管價(jià)格具有很強(qiáng)的競(jìng)爭(zhēng)力.詳情聯(lián)系我們。
GaN IMFET made in China have continued to improve and refine, enabling Gallium Nitride (GaN) transistors to operate at higher frequencies and produce higher output power, widely used in RF amplifiers, which allows earth stations to communicate with those satellites in the sky.
GaN IMFET made in China are much smaller and efficient than in the past. GaN technology is still new as compared with Si and GaAs technology but engineers are starting to explore its benefits and capabilities. GaN has high breakdown field, high saturation velocity and outstanding thermal properties making it very suitable for demanding VSAT applications.
The device is GaN IMFET fully matched to 50 Ωin an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations.
Lead-free and ROHS compliant，Evaluation boards are available upon request.
Key Features
* Frequency: 1.2 to 1.4 GHz
* Output Power (P3dB) : 540 W
* Linear Gain : 19.9 dB
* Typical PAE3dB1: 66.7%
* Operating Voltage: 50 V
* Low thermal resistance package
* Pulse capable
Note 1: @ 1.3 GH
